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"Matched FETs can be used to construct
high-input-impedance front-end stages for
bipolar differential amplifiers, as well as
the important op-amps and comparators
we’ll meet in the next chapter. As we men-
tioned earlier, the substantial VG5 offsets
of FETs will generally result in larger input
voltage offsets and offset drifts than with a
comparable amplifier constructed entirely
with bipolar transistors, but of course the
input impedance will be raised enormously.
In general, FETs have characteristics that
make them useful substitutes for bipolar
transistors in almost any circuit that can
benefit from their uniquely high input im-
pedance and low bias current. A particular
instance is their use in high-stability LC
and crystal oscillators; we’ll show examples
in Sections 5.18, 5.19, and 13.1."