Micron GDDR7 Memory Official: 32 Gbps Speeds, Over 1.5 TB/s Bandwidth & 30% Improvement In Game Performance Across All Resolutions
Leveraging 1β (1-beta) DRAM technology and innovative architecture, Micron GDDR7 delivers 32 Gb/s high-performance memory in a power-optimized design. With over 1.5 TB/s of system bandwidth, which is up to 60% higher bandwidth than GDDR6, and four independent channels to optimize workloads, GDDR7 memory enables faster response times, smoother gameplay, and reduced processing times.
https://wccftech.com/micron-gddr7-memory-32-gbps-speeds-over-1-5-tbps-bandwidth-30-percent-faster-game-performance-all-resolutions/
Topic: Video Memory Discussion (Read 544 times)
GPUs poised for major performance enhancements under preliminary HBM4 specs
HBM4 is designed to further enhance data processing rates, offering higher bandwidth and increased capacity per die and/or stack compared to its predecessor, HBM3. It also aims to maintain lower power consumption, which is crucial for large-scale computing operations.
Technical advancements include a doubled channel count per stack compared to HBM3, a larger physical footprint, compatibility with HBM3 through a single controller, and support for 24 Gb and 32 Gb layers. There is also an initial agreement on speed bins up to 6.4 Gbps, with discussions about higher frequencies. Missing from the specs is the integration of HBM4 memory directly on processors, which Tom's Hardware says is perhaps the most intriguing part about the new type of memory.
HBM4 is particularly important for generative artificial intelligence, high-performance computing, high-end graphics cards, and servers. In particular, AI applications will benefit from the data processing and memory capabilities the standard will offer, allowing AI applications to handle larger datasets and perform complex calculations more quickly.
HBM4 is designed to further enhance data processing rates, offering higher bandwidth and increased capacity per die and/or stack compared to its predecessor, HBM3. It also aims to maintain lower power consumption, which is crucial for large-scale computing operations.
Technical advancements include a doubled channel count per stack compared to HBM3, a larger physical footprint, compatibility with HBM3 through a single controller, and support for 24 Gb and 32 Gb layers. There is also an initial agreement on speed bins up to 6.4 Gbps, with discussions about higher frequencies. Missing from the specs is the integration of HBM4 memory directly on processors, which Tom's Hardware says is perhaps the most intriguing part about the new type of memory.
HBM4 is particularly important for generative artificial intelligence, high-performance computing, high-end graphics cards, and servers. In particular, AI applications will benefit from the data processing and memory capabilities the standard will offer, allowing AI applications to handle larger datasets and perform complex calculations more quickly.
RAM chip manufacturer Micron has recently been making some interesting claims about its next generation of ultra-fast memory for graphics cards, GDDR7. Compared to what's currently being used (GDDR6X and GDDR6), Micron says its forthcoming tech is "expected to achieve greater than 30% improvement in frames per second for ray tracing and rasterization workloads."
That's a remarkable performance boost, no matter how you look at it, and it's normally the preserve of the significant architectural changes a new GPU design brings in. However, while it's certainly true that the data transfer rate and bandwidth of GDDR7 will be at least 30% greater than the fastest GDDR6/6X on offer right now, it's a different story altogether when it comes to actual games and applications.
https://www.pcgamer.com/hardware/graphics-cards/micron-expects-gddr7-will-improve-ray-tracing-and-rasterization-performance-by-more-than-30-compared-to-previous-gen-vram/
That's a remarkable performance boost, no matter how you look at it, and it's normally the preserve of the significant architectural changes a new GPU design brings in. However, while it's certainly true that the data transfer rate and bandwidth of GDDR7 will be at least 30% greater than the fastest GDDR6/6X on offer right now, it's a different story altogether when it comes to actual games and applications.
https://www.pcgamer.com/hardware/graphics-cards/micron-expects-gddr7-will-improve-ray-tracing-and-rasterization-performance-by-more-than-30-compared-to-previous-gen-vram/
Thanks for sharing this insightful information about DDR6 and LPDDR6 memory advancements!
The leap in bandwidth for LPDDR6 is indeed impressive, with 10.667 Gbps per-pin translating to about 28.5 GB/sec from a single LPDDR6 IC. When you consider a typical desktop PC's dual-channel memory interface, the potential 228 GB/second of memory bandwidth is a significant boost compared to the 102.4 GB/second with DDR5-6400 memory. This essentially doubles the available system memory bandwidth, which is quite remarkable.
As for regular desktop DDR6, it's exciting to see the projected data rates ranging from 8.8 Gbps up to potentially 21 Gbps. With JEDEC's draft spec expected this year and finalization anticipated by Q2 of 2025, we're on the cusp of a new era in memory technology that could substantially enhance overall system performance.
Looking forward to seeing how these advancements will impact both consumer and enterprise computing in the near future!
I have always said that the main clients of video card stores are miners. If there is nothing to mine with a good profit and the payback is approaching 2 years, then prices in stores are much lower than recommended. Most gechmers are played on old video cards, which is confirmed by the report from Steam. The leap in bandwidth for LPDDR6 is indeed impressive, with 10.667 Gbps per-pin translating to about 28.5 GB/sec from a single LPDDR6 IC. When you consider a typical desktop PC's dual-channel memory interface, the potential 228 GB/second of memory bandwidth is a significant boost compared to the 102.4 GB/second with DDR5-6400 memory. This essentially doubles the available system memory bandwidth, which is quite remarkable.
As for regular desktop DDR6, it's exciting to see the projected data rates ranging from 8.8 Gbps up to potentially 21 Gbps. With JEDEC's draft spec expected this year and finalization anticipated by Q2 of 2025, we're on the cusp of a new era in memory technology that could substantially enhance overall system performance.
Looking forward to seeing how these advancements will impact both consumer and enterprise computing in the near future!
Thanks for sharing this insightful information about DDR6 and LPDDR6 memory advancements!
The leap in bandwidth for LPDDR6 is indeed impressive, with 10.667 Gbps per-pin translating to about 28.5 GB/sec from a single LPDDR6 IC. When you consider a typical desktop PC's dual-channel memory interface, the potential 228 GB/second of memory bandwidth is a significant boost compared to the 102.4 GB/second with DDR5-6400 memory. This essentially doubles the available system memory bandwidth, which is quite remarkable.
As for regular desktop DDR6, it's exciting to see the projected data rates ranging from 8.8 Gbps up to potentially 21 Gbps. With JEDEC's draft spec expected this year and finalization anticipated by Q2 of 2025, we're on the cusp of a new era in memory technology that could substantially enhance overall system performance.
Looking forward to seeing how these advancements will impact both consumer and enterprise computing in the near future!
__________________________
https://tradernew.pro/
The leap in bandwidth for LPDDR6 is indeed impressive, with 10.667 Gbps per-pin translating to about 28.5 GB/sec from a single LPDDR6 IC. When you consider a typical desktop PC's dual-channel memory interface, the potential 228 GB/second of memory bandwidth is a significant boost compared to the 102.4 GB/second with DDR5-6400 memory. This essentially doubles the available system memory bandwidth, which is quite remarkable.
As for regular desktop DDR6, it's exciting to see the projected data rates ranging from 8.8 Gbps up to potentially 21 Gbps. With JEDEC's draft spec expected this year and finalization anticipated by Q2 of 2025, we're on the cusp of a new era in memory technology that could substantially enhance overall system performance.
Looking forward to seeing how these advancements will impact both consumer and enterprise computing in the near future!
__________________________
https://tradernew.pro/
DDR6 And LPDDR6 Memory
Thanks to the increased bandwidth, the 10.667 Gbps per-pin data rate translates to about 28.5 GB/sec of memory bandwidth from a single LPDDR6 IC. If we talk about a typical desktop PC's "dual-channel" memory interface, we're looking at 228 GB/second of memory bandwidth. For comparison, a PC using DDR5-6400 memory only has 102.4 GB/second of memory bandwidth. In short, LPDDR6 looks like it will roughly double available system memory bandwidth once it hits.
But what about regular old desktop DDR6? The spec for it isn't final yet, but JEDEC's documents suggest that data rates for the socketable RAM could start as high as 8.8 Gbps and then scale all the way to 17.6 Gbps, or perhaps even as high as 21 Gbps. JEDEC's notes suggest that the draft spec for DDR6 should be released this year, and then the spec should be finalized in Q2 of 2025.
Thanks to the increased bandwidth, the 10.667 Gbps per-pin data rate translates to about 28.5 GB/sec of memory bandwidth from a single LPDDR6 IC. If we talk about a typical desktop PC's "dual-channel" memory interface, we're looking at 228 GB/second of memory bandwidth. For comparison, a PC using DDR5-6400 memory only has 102.4 GB/second of memory bandwidth. In short, LPDDR6 looks like it will roughly double available system memory bandwidth once it hits.
But what about regular old desktop DDR6? The spec for it isn't final yet, but JEDEC's documents suggest that data rates for the socketable RAM could start as high as 8.8 Gbps and then scale all the way to 17.6 Gbps, or perhaps even as high as 21 Gbps. JEDEC's notes suggest that the draft spec for DDR6 should be released this year, and then the spec should be finalized in Q2 of 2025.
SK Hynix Revealed Progress for HBM3e, Achieving Nearly 80% Yield
SK hynix has disclosed yield details regarding the company’s 5th generation High Bandwidth Memory (HBM), HBM3e, for the first time. According to a report from the Financial Times, citing Kwon Jae-soon, the head of yield at SK hynix, the memory giant has successfully reduced the time needed for mass production of HBM3e chips by 50%, while close to achieving the target yield of 80%.
This is better than the industry’s previous speculation, which estimated the yield of SK Hynix’s HBM3e to be between 60% and 70%, according to a report by Business Korea.
Good news for buyers of NVIDIA B100 or H200 in the future, but miners do not buy such video cards. The price is very high.SK hynix has disclosed yield details regarding the company’s 5th generation High Bandwidth Memory (HBM), HBM3e, for the first time. According to a report from the Financial Times, citing Kwon Jae-soon, the head of yield at SK hynix, the memory giant has successfully reduced the time needed for mass production of HBM3e chips by 50%, while close to achieving the target yield of 80%.
This is better than the industry’s previous speculation, which estimated the yield of SK Hynix’s HBM3e to be between 60% and 70%, according to a report by Business Korea.
If AMD releases some modern analogue of VEGA on HBM3e, then it will be interesting to test.
SK Hynix Revealed Progress for HBM3e, Achieving Nearly 80% Yield
SK hynix has disclosed yield details regarding the company’s 5th generation High Bandwidth Memory (HBM), HBM3e, for the first time. According to a report from the Financial Times, citing Kwon Jae-soon, the head of yield at SK hynix, the memory giant has successfully reduced the time needed for mass production of HBM3e chips by 50%, while close to achieving the target yield of 80%.
This is better than the industry’s previous speculation, which estimated the yield of SK Hynix’s HBM3e to be between 60% and 70%, according to a report by Business Korea.
SK hynix has disclosed yield details regarding the company’s 5th generation High Bandwidth Memory (HBM), HBM3e, for the first time. According to a report from the Financial Times, citing Kwon Jae-soon, the head of yield at SK hynix, the memory giant has successfully reduced the time needed for mass production of HBM3e chips by 50%, while close to achieving the target yield of 80%.
This is better than the industry’s previous speculation, which estimated the yield of SK Hynix’s HBM3e to be between 60% and 70%, according to a report by Business Korea.
SK Hynix Reveals Plans For Cutting-Edge HBM4E Memory, Development Expected By 2026
The massive HBM industry growth has initiated the "fire" of innovations, with the Korean giant SK hynix revealing plans for HBM4E memory.
SK Hynix Looks To Establish New Benchmarks With HBM4E Through Integration of Semiconductors & Memory Into One Package
Right now, the AI industry sees HBM as a crucial component for progress in performance capabilities due to its immense importance in modern-day AI accelerators. Recently, we saw the widespread adoption of the HBM3E standard in newer AI GPUs such as the Blackwell B100 and the Instinct MI300X, which brought in a huge boost in performances; however, SK hynix has disclosed that this is just the start, as the Korean memory manufacturer plans on mass-adoption of the HBM4E somewhere within the next two years.
https://wccftech.com/sk-hynix-reveals-plans-for-cutting-edge-hbm4e-memory-development-expected-by-2026/
The massive HBM industry growth has initiated the "fire" of innovations, with the Korean giant SK hynix revealing plans for HBM4E memory.
SK Hynix Looks To Establish New Benchmarks With HBM4E Through Integration of Semiconductors & Memory Into One Package
Right now, the AI industry sees HBM as a crucial component for progress in performance capabilities due to its immense importance in modern-day AI accelerators. Recently, we saw the widespread adoption of the HBM3E standard in newer AI GPUs such as the Blackwell B100 and the Instinct MI300X, which brought in a huge boost in performances; however, SK hynix has disclosed that this is just the start, as the Korean memory manufacturer plans on mass-adoption of the HBM4E somewhere within the next two years.
https://wccftech.com/sk-hynix-reveals-plans-for-cutting-edge-hbm4e-memory-development-expected-by-2026/
HBM Prices to Increase by 5-10% in 2025, Accounting for Over 30% of Total DRAM Value, Says TrendForce
Avril Wu, TrendForce Senior Research Vice President, reports that the HBM market is poised for robust growth, driven by significant pricing premiums and increased capacity needs for AI chips. HBM's unit sales price is several times higher than that of conventional DRAM and about five times that of DDR5. This pricing, combined with product iterations in AI chip technology that increase single-device HBM capacity, is expected to dramatically raise HBM's share in both the capacity and market value of the DRAM market from 2023 to 2025.
Specifically, HBM's share of total DRAM bit capacity is estimated to rise from 2% in 2023 to 5% in 2024 and surpass 10% by 2025. In terms of market value, HBM is projected to account for more than 20% of the total DRAM market value starting in 2024, potentially exceeding 30% by 2025.
Avril Wu, TrendForce Senior Research Vice President, reports that the HBM market is poised for robust growth, driven by significant pricing premiums and increased capacity needs for AI chips. HBM's unit sales price is several times higher than that of conventional DRAM and about five times that of DDR5. This pricing, combined with product iterations in AI chip technology that increase single-device HBM capacity, is expected to dramatically raise HBM's share in both the capacity and market value of the DRAM market from 2023 to 2025.
Specifically, HBM's share of total DRAM bit capacity is estimated to rise from 2% in 2023 to 5% in 2024 and surpass 10% by 2025. In terms of market value, HBM is projected to account for more than 20% of the total DRAM market value starting in 2024, potentially exceeding 30% by 2025.
Samsung Electronics’ operating profit jumps 933% in first quarter, beats expectations
Samsung Electronics, the world’s largest memory chip maker, said operating profit jumped 932.8% in the first quarter ending March.
Citi analysts on Apr. 5 said they see upside of Samsung’s NAND flash memory business from AI computing demand, reiterating their “buy” rating on the firm.
The South Korean electronics giant saw record losses in 2023 as the industry reeled from a post-Covid slump in demand.
https://www.cnbc.com/2024/04/30/samsung-electronics-first-quarter-earnings.html
Samsung Electronics, the world’s largest memory chip maker, said operating profit jumped 932.8% in the first quarter ending March.
Citi analysts on Apr. 5 said they see upside of Samsung’s NAND flash memory business from AI computing demand, reiterating their “buy” rating on the firm.
The South Korean electronics giant saw record losses in 2023 as the industry reeled from a post-Covid slump in demand.
https://www.cnbc.com/2024/04/30/samsung-electronics-first-quarter-earnings.html
Minimal Initial Damage to DRAM and Foundry Production Lines Following Major Earthquake in Taiwan on April 3; Details of Losses Still Under Assessment, Says TrendForce
In the wake of a 7.2-magnitude earthquake off the eastern coast of Taiwan at 7:58 AM on April 3rd, TrendForce immediately investigated the damage and operational status of various manufacturers. The DRAM industry, primarily located in the northern and central parts of Taiwan, and the foundry industry, spread across the north, central, and southern regions of Taiwan, appear to have sustained minimal initial damage.
The strongest tremors felt in the northern Linkou area ranged from intensity scale 4 to 5, with other regions experiencing around intensity scale 4 tremors. Manufacturers have begun sequential shutdowns for inspections. Despite the ongoing inspections, no significant equipment damages have been reported so far.
https://www.trendforce.com/presscenter/news/20240403-12104.html
In the wake of a 7.2-magnitude earthquake off the eastern coast of Taiwan at 7:58 AM on April 3rd, TrendForce immediately investigated the damage and operational status of various manufacturers. The DRAM industry, primarily located in the northern and central parts of Taiwan, and the foundry industry, spread across the north, central, and southern regions of Taiwan, appear to have sustained minimal initial damage.
The strongest tremors felt in the northern Linkou area ranged from intensity scale 4 to 5, with other regions experiencing around intensity scale 4 tremors. Manufacturers have begun sequential shutdowns for inspections. Despite the ongoing inspections, no significant equipment damages have been reported so far.
https://www.trendforce.com/presscenter/news/20240403-12104.html
SK hynix teases GDDR7 memory with 40 Gbps speed and 3GB capacity
During GTC 2024, NVIDIA unveiled its plan for the upcoming Blackwell GPU architecture. Alongside NVIDIA’s presentations, attendees could explore the latest offerings from memory companies. Samsung, for instance, is gearing up to introduce its 28 Gbps and 32 Gbps memory modules tailored for next-generation gaming GPUs. Meanwhile, Hynix is taking a step ahead by confirming the development of modules supporting even faster speeds.
During GTC 2024, NVIDIA unveiled its plan for the upcoming Blackwell GPU architecture. Alongside NVIDIA’s presentations, attendees could explore the latest offerings from memory companies. Samsung, for instance, is gearing up to introduce its 28 Gbps and 32 Gbps memory modules tailored for next-generation gaming GPUs. Meanwhile, Hynix is taking a step ahead by confirming the development of modules supporting even faster speeds.
Product Pages of Samsung 28 Gbps and 32 Gbps GDDR7 Chips Go Live
Samsung is ready with a GDDR7 memory chip rated at an oddly-specific 28 Gbps. This speed aligns with the reported default memory speeds of next-generation NVIDIA GeForce RTX "Blackwell" GPUs. The Samsung GDDR7 memory chip bearing model number K4VAF325ZC-SC28, pictured below, ticks at 3500 MHz, yielding 28 Gbps (GDDR7-effective) memory speeds, and comes with a density of 16 Gbit (2 GB). This isn't Samsung's only GDDR7 chip at launch, the company also has a 32 Gbps high performance part that it built in hopes that certain high-end SKUs or professional graphics cards may implement it. The 32 Gbps GDDR7 chip, bearing the chip model number K4VAF325ZC-SC32, offers the same 16 Gbit density, but at a higher 4000 MHz clock. The Samsung website part-identification pages for both chips say that the parts are sampling to customers, which is usually just before it enters mass-production, and is marked "shipping."
https://www.techpowerup.com/320822/product-pages-of-samsung-28-gbps-and-32-gbps-gddr7-chips-go-live
Samsung is ready with a GDDR7 memory chip rated at an oddly-specific 28 Gbps. This speed aligns with the reported default memory speeds of next-generation NVIDIA GeForce RTX "Blackwell" GPUs. The Samsung GDDR7 memory chip bearing model number K4VAF325ZC-SC28, pictured below, ticks at 3500 MHz, yielding 28 Gbps (GDDR7-effective) memory speeds, and comes with a density of 16 Gbit (2 GB). This isn't Samsung's only GDDR7 chip at launch, the company also has a 32 Gbps high performance part that it built in hopes that certain high-end SKUs or professional graphics cards may implement it. The 32 Gbps GDDR7 chip, bearing the chip model number K4VAF325ZC-SC32, offers the same 16 Gbit density, but at a higher 4000 MHz clock. The Samsung website part-identification pages for both chips say that the parts are sampling to customers, which is usually just before it enters mass-production, and is marked "shipping."
https://www.techpowerup.com/320822/product-pages-of-samsung-28-gbps-and-32-gbps-gddr7-chips-go-live
NVIDIA Reportedly Sampling SK Hynix 12-layer HBM3E
SK Hynix is believed to be leading the pack—insiders believe that yield rates are good enough to pass early NVIDIA certification, and advanced 12-layer samples are expected to be approved in the near future. ZDNET reckons that SK Hynix's forward momentum has placed it an advantageous position: "(They) supplied 8-layer HBM3E samples in the second half of last year and passed recent testing. Although the official schedule has not been revealed, mass production is expected to begin as early as this month. Furthermore, SK Hynix supplied 12-layer HBM3E samples to NVIDIA last month. This sample is an extremely early version and is mainly used to establish standards and characteristics of new products. SK Hynix calls it UTV (Universal Test Vehicle)... Since Hynix has already completed the performance verification of the 8-layer HBM3E, it is expected that the 12-layer HBM3E test will not take much time." SK Hynix's Vice President recently revealed that his company's 2024 HBM production volumes for were already sold out, and leadership is already preparing innovations for 2025 and beyond.
SK Hynix is believed to be leading the pack—insiders believe that yield rates are good enough to pass early NVIDIA certification, and advanced 12-layer samples are expected to be approved in the near future. ZDNET reckons that SK Hynix's forward momentum has placed it an advantageous position: "(They) supplied 8-layer HBM3E samples in the second half of last year and passed recent testing. Although the official schedule has not been revealed, mass production is expected to begin as early as this month. Furthermore, SK Hynix supplied 12-layer HBM3E samples to NVIDIA last month. This sample is an extremely early version and is mainly used to establish standards and characteristics of new products. SK Hynix calls it UTV (Universal Test Vehicle)... Since Hynix has already completed the performance verification of the 8-layer HBM3E, it is expected that the 12-layer HBM3E test will not take much time." SK Hynix's Vice President recently revealed that his company's 2024 HBM production volumes for were already sold out, and leadership is already preparing innovations for 2025 and beyond.
GDDR7 memory to come in 2GB to 8GB capacity
According to NVIDIA hardware leaker “Kopite7kimi”, the first products using GDDR7 memory will be sticking to the minimum density of 16 Gb (2GB) per module, the same capacity as currently utilized by GDDR6X models.
At its introduction, the 2GB GDDR7 capacity will already be an upgrade over GDDR6, which debuted with 8 Gb (1GB) density and was extensively used by first graphics cards using this technology, such as GeForce RTX 20 and later RTX 30 series. Worth reminding that the lack of 2GB GDDR6(X) modules was the reason RTX 3090 required 24 modules on both sides of the PCB.
https://videocardz.com/newz/first-generation-of-gddr7-graphics-cards-sticking-to-16gbit-2gb-modules-3gb-on-roadmaps
According to NVIDIA hardware leaker “Kopite7kimi”, the first products using GDDR7 memory will be sticking to the minimum density of 16 Gb (2GB) per module, the same capacity as currently utilized by GDDR6X models.
At its introduction, the 2GB GDDR7 capacity will already be an upgrade over GDDR6, which debuted with 8 Gb (1GB) density and was extensively used by first graphics cards using this technology, such as GeForce RTX 20 and later RTX 30 series. Worth reminding that the lack of 2GB GDDR6(X) modules was the reason RTX 3090 required 24 modules on both sides of the PCB.
https://videocardz.com/newz/first-generation-of-gddr7-graphics-cards-sticking-to-16gbit-2gb-modules-3gb-on-roadmaps
GDDR7 at 37 Gbps to enable up to 1.7 TB/s bandwidth for 384-bit cards
Samsung is preparing 37 GB/s graphics memory based on GDDR7 technology.
The upcoming 2024 ISSCC program outlines plans for high-speed memory, featuring 37 Gb/s and 35.4 Gb/s variants based on Samsung and SK Hynix’s GDDR7 specifications. Both companies intend to delve into advancements in graphics memory, utilizing the innovative PAM3 and NRZ signaling technologies.
While GDDR7 memory, with speeds reaching up to 32 Gb/s, has already been officially announced, Samsung and Hynix are pushing the boundaries further with even faster memory developments. Micron is also in the race, announcing its commitment to developing 36 Gb/s GDDR7 memory, expected to hit the market no earlier than 2026. In this competitive landscape, Samsung and Hynix are set to introduce first modules with slightly lower speeds, most likely gradually making 35 Gb/s modules available at a later stage.
Samsung is preparing 37 GB/s graphics memory based on GDDR7 technology.
The upcoming 2024 ISSCC program outlines plans for high-speed memory, featuring 37 Gb/s and 35.4 Gb/s variants based on Samsung and SK Hynix’s GDDR7 specifications. Both companies intend to delve into advancements in graphics memory, utilizing the innovative PAM3 and NRZ signaling technologies.
While GDDR7 memory, with speeds reaching up to 32 Gb/s, has already been officially announced, Samsung and Hynix are pushing the boundaries further with even faster memory developments. Micron is also in the race, announcing its commitment to developing 36 Gb/s GDDR7 memory, expected to hit the market no earlier than 2026. In this competitive landscape, Samsung and Hynix are set to introduce first modules with slightly lower speeds, most likely gradually making 35 Gb/s modules available at a later stage.
Micron announces 32 Gbit FeRAM Chip: A Leap Forward in Memory Technology
In December 2023, US-based semiconductor company Micron announced at the International Electron Devices Meeting (IEDM) the development of a high-capacity FeRAM memory chip boasting a staggering capacity of 32 Gbits.
FeRAM memory technology has seen around two decades of existence, with usual chip capacities ranging between 8 to 128 Mbits. Micron’s new development, in contrast, offers significantly increased storage capacity that can potentially revolutionize non-volatile memory technology.
https://davesipaq.com/micron-secretly-develops-32gb-feram-chip-a-durable-energy-independent-memory-with-speed-comparable-to-dram/
In December 2023, US-based semiconductor company Micron announced at the International Electron Devices Meeting (IEDM) the development of a high-capacity FeRAM memory chip boasting a staggering capacity of 32 Gbits.
FeRAM memory technology has seen around two decades of existence, with usual chip capacities ranging between 8 to 128 Mbits. Micron’s new development, in contrast, offers significantly increased storage capacity that can potentially revolutionize non-volatile memory technology.
https://davesipaq.com/micron-secretly-develops-32gb-feram-chip-a-durable-energy-independent-memory-with-speed-comparable-to-dram/
Samsung Unveils HBM3E Memory and Provides Details on HBM4, GDDR7, and Detachable AutoSSD
One of the key features of Samsung’s HBM3E memory is its faster data transfer speed compared to similar chips from Micron and SK Hynix. With data transfer speeds of 9.8Gbps per pin, it is capable of reaching transfer rates of up to 1.2TBps. Samsung has also enhanced its NCF (Non-Conductive Film) technology to improve thermal conductivity by reducing the gaps between chip layers.
The HBM3E memory is currently in the sampling phase and being sent to clients for testing. Mass production is expected to begin in 2024. Additionally, Samsung unveiled plans for the development of HBM4 memory, which will utilize more advanced chip manufacturing and packaging technologies. The company aims to use a wider 2,048-bit memory interface and FinFET transistors to reduce power consumption.
Samsung also provided more details on its GDDR7 memory, which offers a 50% reduction in standby power consumption compared to previous generations. The company plans to start shipping 16Gbit modules that can operate at up to 32Gbps per pin. This new memory type improves power efficiency in both active and standby states.
https://isp.page/news/samsung-unveils-shinebolt-hbm3e-memory-updates-hbm4-development-2/
One of the key features of Samsung’s HBM3E memory is its faster data transfer speed compared to similar chips from Micron and SK Hynix. With data transfer speeds of 9.8Gbps per pin, it is capable of reaching transfer rates of up to 1.2TBps. Samsung has also enhanced its NCF (Non-Conductive Film) technology to improve thermal conductivity by reducing the gaps between chip layers.
The HBM3E memory is currently in the sampling phase and being sent to clients for testing. Mass production is expected to begin in 2024. Additionally, Samsung unveiled plans for the development of HBM4 memory, which will utilize more advanced chip manufacturing and packaging technologies. The company aims to use a wider 2,048-bit memory interface and FinFET transistors to reduce power consumption.
Samsung also provided more details on its GDDR7 memory, which offers a 50% reduction in standby power consumption compared to previous generations. The company plans to start shipping 16Gbit modules that can operate at up to 32Gbps per pin. This new memory type improves power efficiency in both active and standby states.
https://isp.page/news/samsung-unveils-shinebolt-hbm3e-memory-updates-hbm4-development-2/
In mining, fast memory has lost its meaning because it is not needed in all algorithms. And ASICs now work on coins with a similar Ethereum algorithm. New coins require a more powerful video processor for higher hashrate and the new HBM memory is expensive for regular video cards.
its been stuck for decades now, when HBM implemented in 2nd generation amd gpu = vega is the first proper high bandwith memory without backed high computational power,
in todays world seems memory getting less bandwith in term pair computational power, while mining need ton of bandwith for asic resistant. while amd seem abandoned HBM series for gaming card
gddr7 seems interesting, but most interesting part was lpddr6 which may take huge leap portable/mobile device and metaverse become more common thing
in todays world seems memory getting less bandwith in term pair computational power, while mining need ton of bandwith for asic resistant. while amd seem abandoned HBM series for gaming card
gddr7 seems interesting, but most interesting part was lpddr6 which may take huge leap portable/mobile device and metaverse become more common thing
Micron Delivers HBM3 Gen2 Memory Samples To NVIDIA, Customers Blown Away By Performance & Efficiency
Micron's next-gen HBM3 technology is named "HBM3 Gen2". Regarding specifications, it features a 1β process node, which brings in much faster speeds and denser capacities. The first batch of 2nd-generation HBM3 features an 8-Hi design, offering up to 24 GB capacities and bandwidth exceeding 1.2 TB/s with up to 2.5x the performance per watt of the prior generation. The DRAM will operate at 9.2 Gb/s, a 50% boost over the standard "HBM3", which runs around 4.6 Gb/s speeds.
https://wccftech.com/micron-hbm3-gen2-memory-samples-nvidia-customers-blown-away-performance-efficiency/
Micron's next-gen HBM3 technology is named "HBM3 Gen2". Regarding specifications, it features a 1β process node, which brings in much faster speeds and denser capacities. The first batch of 2nd-generation HBM3 features an 8-Hi design, offering up to 24 GB capacities and bandwidth exceeding 1.2 TB/s with up to 2.5x the performance per watt of the prior generation. The DRAM will operate at 9.2 Gb/s, a 50% boost over the standard "HBM3", which runs around 4.6 Gb/s speeds.
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HBM3 Gen2 memory is expected to be used in Nvidia Blackwell compute accelerators, which could appear as early as next year. Such memory is unlikely to appear in gaming video cards, although GDDR7 will also offer an impressive increase in performance compared to GDDR6X.
https://wccftech.com/micron-hbm3-gen2-memory-samples-nvidia-customers-blown-away-performance-efficiency/
Samsung Develops Industry’s First GDDR7 DRAM To Unlock the Next Generation of Graphics Performance
Samsung’s latest 32Gbps GDDR7 to further expand capabilities in applications for AI, HPC and automotive vehicles
Enhancements in GDDR7 include 1.4 times boost in performance and 20% improvement in power efficiency versus existing 24Gbps GDDR6 DRA
https://videocardz.com/press-release/samsung-introduces-worlds-first-gddr7-memory-up-to-32-gbps
Samsung’s GDDR7 achieves an impressive bandwidth of 1.5-terabytes-per-second (TBps), which is 1.4 times that of GDDR6’s 1.1TBps and features a boosted speed per pin of up to 32Gbps. The enhancements are made possible by the Pulse Amplitude Modulation (PAM3) signaling method adopted for the new memory standard instead of the Non Return to Zero (NRZ) from previous generations. PAM3 allows 50% more data to be transmitted than NRZ within the same signaling cycle.
Samsung’s latest 32Gbps GDDR7 to further expand capabilities in applications for AI, HPC and automotive vehicles
Enhancements in GDDR7 include 1.4 times boost in performance and 20% improvement in power efficiency versus existing 24Gbps GDDR6 DRA
https://videocardz.com/press-release/samsung-introduces-worlds-first-gddr7-memory-up-to-32-gbps
Samsung’s GDDR7 achieves an impressive bandwidth of 1.5-terabytes-per-second (TBps), which is 1.4 times that of GDDR6’s 1.1TBps and features a boosted speed per pin of up to 32Gbps. The enhancements are made possible by the Pulse Amplitude Modulation (PAM3) signaling method adopted for the new memory standard instead of the Non Return to Zero (NRZ) from previous generations. PAM3 allows 50% more data to be transmitted than NRZ within the same signaling cycle.
some plans about technologies
TSMC
Samsung
https://t.me/HomishTG/5177
https://t.me/HomishTG/5178
There is an opinion that new models of processors and video cards will cost more, because the construction of new factories is a very expensive investment. And earlier we were told that it is difficult to make 3 nm, but today 4 nm is already a common technology.
TSMC
Samsung
https://t.me/HomishTG/5177
https://t.me/HomishTG/5178
There is an opinion that new models of processors and video cards will cost more, because the construction of new factories is a very expensive investment. And earlier we were told that it is difficult to make 3 nm, but today 4 nm is already a common technology.
SK hynix Develops Industry's First 12-Layer HBM3, Provides Samples To Customers
Develops HBM3 product with industry's largest 24GB memory capacity; customers' performance evaluation of samples underway
Features high-capacity and high-performance through stacking of 12 DRAM chips
Plans to complete preparation for mass production by first half of 2023, aimed at solidifying company's leadership in cutting-edge DRAM market
Develops HBM3 product with industry's largest 24GB memory capacity; customers' performance evaluation of samples underway
Features high-capacity and high-performance through stacking of 12 DRAM chips
Plans to complete preparation for mass production by first half of 2023, aimed at solidifying company's leadership in cutting-edge DRAM market
Samsung Electronics is ready to mass produce its third-generation 4-nm chips, which is the main item in the foundry ultra-micro fabrication process sector, according to a report. The Korean company has apparently resolved early-stage yield issues and achieved advancements in performance, power consumption, and area improvement. Manufacturing should start during the first half of this year.
https://www.gizmochina.com/2023/03/14/samsung-mass-production-third-generation-4nm-chips/
https://www.gizmochina.com/2023/03/14/samsung-mass-production-third-generation-4nm-chips/
I wonder what capacity the new graphic cards will have then,as the lower the nm the more transistors can fit in so in theory they should be much more powerful than the 7 nm I know the Rx 6000 series were and maybe Nvidia 3000 series but I am not sure about Nvidia.
Who knows if they improve the graphic cards up to the level described it will surely make mining more enticing again,not for everyone but for the majority who are enthusiasts about crypto and mining in general,so can't wait until we see mass production of 4 nm graphic cards.
Not all algorithms are memory dependent. The Ethereum algorithm loved fast memory, and new coins love powerful GPU cores. Therefore, old generations of video cards now give a very small profit, and new GPUs pay off for a very long time.
Good, the lesser the nm the better laptops and small form factor products will run cooler, graphic cards will benefit from this, I am a fan of PC gaming and the only reason why I haven't looked into handheld gaming PC is because of cooling performance, the intel 11 gen found in latest Ayaneo and the CPUs in onexplayer2 or gpd win 4 isn't good enough, 4nm will be a banger. Maybe mining will be now possible on laptops without worrying too much about burning the motherboard.
Samsung Electronics is ready to mass produce its third-generation 4-nm chips, which is the main item in the foundry ultra-micro fabrication process sector, according to a report. The Korean company has apparently resolved early-stage yield issues and achieved advancements in performance, power consumption, and area improvement. Manufacturing should start during the first half of this year.
https://www.gizmochina.com/2023/03/14/samsung-mass-production-third-generation-4nm-chips/
https://www.gizmochina.com/2023/03/14/samsung-mass-production-third-generation-4nm-chips/
I wonder what capacity the new graphic cards will have then,as the lower the nm the more transistors can fit in so in theory they should be much more powerful than the 7 nm I know the Rx 6000 series were and maybe Nvidia 3000 series but I am not sure about Nvidia.
Who knows if they improve the graphic cards up to the level described it will surely make mining more enticing again,not for everyone but for the majority who are enthusiasts about crypto and mining in general,so can't wait until we see mass production of 4 nm graphic cards.
Samsung Electronics is ready to mass produce its third-generation 4-nm chips, which is the main item in the foundry ultra-micro fabrication process sector, according to a report. The Korean company has apparently resolved early-stage yield issues and achieved advancements in performance, power consumption, and area improvement. Manufacturing should start during the first half of this year.
https://www.gizmochina.com/2023/03/14/samsung-mass-production-third-generation-4nm-chips/
https://www.gizmochina.com/2023/03/14/samsung-mass-production-third-generation-4nm-chips/
Samsung Memory’s DRAM and NAND Roadmap Explained
https://ebics.net/samsung-memorys-dram-and-nand-roadmap-explained/
80 GB of memory, 700 W and 60 TFLOPS. Nvidia H100 accelerator based on Hopper generation GPU introduced
https://gadgettendency.com/80-gb-of-memory-700-w-and-60-tflops-nvidia-h100-accelerator-based-on-hopper-generation-gpu-introduced/
Both versions have 80 GB of memory, and this is HBM3 with a bandwidth of 2 or 3 TB / s. The TDP of the older version is an incredible 700W, while the PCIe 5.0 version has half that figure.
Will we see gaming graphics cards with HBM3 memory?
https://ebics.net/samsung-memorys-dram-and-nand-roadmap-explained/
80 GB of memory, 700 W and 60 TFLOPS. Nvidia H100 accelerator based on Hopper generation GPU introduced
https://gadgettendency.com/80-gb-of-memory-700-w-and-60-tflops-nvidia-h100-accelerator-based-on-hopper-generation-gpu-introduced/
Both versions have 80 GB of memory, and this is HBM3 with a bandwidth of 2 or 3 TB / s. The TDP of the older version is an incredible 700W, while the PCIe 5.0 version has half that figure.
Will we see gaming graphics cards with HBM3 memory?
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